BC856 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP general purpose transistors

BC856/857/858/859/860
Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
: BC856
: BC857/860
: BC858/859
V_CEO
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
V_EBO
I_C
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
3
2
1 ^SOT-23
1. Base 2. Emitter 3. Collector
Value
-80
-50
-30
-65
-45
-30
-5
-100
310
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I_CBO
h_FE
V_CE (sat)
V_BE (sat)
V_BE (on)
f_T
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V_CB= -30V, I_E=0
V_CE= -5V, I_C= -2mA
I_C= -10mA, I_B= -0.5mA
I_C= -100mA, I_B= -5mA
I_C= -10mA, I_B= -0.5mA
I_C= -100mA, I_B= -5mA
V_CE= -5V, I_C= -2mA
V_CE= -5V, I_C= -10mA
V_CE= -5V, I_C= -10mA
f=100MHz
C_ob
Output Capacitance
V_CB= -10V, I_E=0, f=1MHz
NF
Noise Figure : BC856/857/858
V_CE= -5V, I_C= -200µA
: BC859/860
f=1KHz, R_G=2KΩ
: BC859
V_CE= -5V, I_C= -200µA
: BC860
R_G=2KΩ, f=30~15000Hz
Min.
110
-600
Typ.
-90
-250
-700
-900
-660
150
2
1
1.2
1.2
Max.
-15
800
-300
-650
-750
-800
Units
nA
mV
mV
mV
mV
mV
mV
MHz
6
pF
10
dB
4
dB
4
dB
2
dB
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002