2N5484 Datasheet, PDF (3/7 Pages) ON Semiconductor – JFET VHF/UHF Amplifiers

Typical Characteristics
Transfer Characteristics
20
V _GS(OFF) = -4.5V
16
T_A = -55 ^OC
T = +25 O C
A
12
T = +125O C
A
8
V _DS = 15V
T_A = -55 ^OC
T = +25 ^O C
A
T = +125O C
A
4
-2.5 V
0
0
-1
-2
-3
-4
-5
V_GS- GATE-SOURCE VOLTAGE(V)
N-Channel RF Amplifier
(continued)
Channel Resistance vs Temperature
1000
500
V _GS(OFF) = -1.0V
300
200
-2.5 V
-5.0V
100
-8.0 V
50
30
20
V _DS = 100mV
10
-50
0
V =0V
GS
50
100
150
T_A - AMBIENT TEMPERATURE (^°C)
Transconductance
Characteristics
7
T = -55 ^OC
A
V _DS = 15V
6
T = +25 ^O C
A
5
T = +125^O C
A
T_A = -55 ^OC
4
T = +25 ^O C
A
3
T = +125^O C
A
2
1
-2.5 V
V GS(OFF) = -4.5V
0
0
-1
-2
-3
-4
-5
V - GATE-SOURCE VOLTAGE(V)
GS
Common Drain-Source
Characteristics
5
T = +25 ^O C
A
4 ^{TYP V} GS(OFF) ^{= -5.0V}
3
= ^0V
V ^GS
2
-0.5V -1.0V
-1.5V
-2.0V
-2.5V
-3.0V
-3.5V
1
-4.0V
0
0
0.2
0.4
0.6
0.8
1
V_DS - DRAIN-SOURCE VOLTAGE(V)
Output Conductance vs
Drain Current
T = +25 O C
A
f = 1.0 kHz
20
V = 5v
10
DG
5
10
20
1
0.5
V
= -5.5V
GS(OFF)
5
15 10
15
20
V
= -3.5V
GS(OFF)
V
= -1.5V
GS(OFF)
0.1
0.01 0.02
0.05 0.1 0.2 0.5 1 2
I _D -- DRAIN CURRENT (mA)
5.0V
10V
15V
20V
5 10
Transconductance
Parameter Interactions
gfs, I_DSS @ V _DS = 15 V, V _GS = 0 PULSE
100
r _DS @ V_DS= 100mV, V _GS = 0
50
30
20
10
5
3
20
2
V_GS(OFF) @ V_GS = 15V, I _D= 1nA
10
1
-1
-2
-3
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V - GATE-SOURCE VOLTAGE(V)
GS