2N5484 Datasheet, PDF (1/7 Pages) ON Semiconductor – JFET VHF/UHF Amplifiers

Discrete POWER & Signal
Technologies
2N5484
2N5485
2N5486
MMBF5484
MMBF5485
MMBF5486
G
G
SD
TO-92
D
SOT-23
S
Mark: 6B / 6M / 6H
N-Channel RF Amplifier
This device is designed primarily for electronic switching
applications such as low On Resistance analog switching.
Sourced from Process 50.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_DG
V_GS
I_GF
T_J ,T_stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
- 25
10
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
2N5484
350
2.8
125
357
*MMBF5484
225
1.8
556
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Units
mW
mW /°C
°C/W
°C/W
ã 1997 Fairchild Semiconductor Corporation