TIS73 Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – N-Channel General Purpose Amplifier

N-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)GSS
Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
I_D(off)
Drain Cutoff Leakage Current
VGS(off)
Gate-Source Cutoff Voltage
IG = 1.0 µA, VDS = 0
- 30
V
VGS = 15 V, VDS = 0
- 2.0
nA
V_GS = 15 V, V_DS = 0, T_A = 100°C
- 5.0
µA
V_DS = 15 V, V_GS = 10 V
- 2.0
nA
V_DS = 15 V, V_GS = 10 V, T_A = 100°C
- 5.0
µA
V_DS = 15 V, I_D = 4.0 nA
TIS73
- 4.0
- 10
V
TIS74 - 2.0 - 6.0
V
ON CHARACTERISTICS
I_DSS
Zero-Gate Voltage Drain Current*
r_DS(on)
Drain-Source On Resistance
V_DS = 15 V, V_GS = 0
50
20
V_DS ≤ 0.1 V, V_GS = 0,
f = 1.0 kHz
TIS73
TIS74
mA
100
mA
25
Ω
40
Ω
SMALL-SIGNAL CHARACTERISTICS
C_iss
Input Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = 0, V_GS = 10 V, f = 1.0 MHz
V_DS = 0, V_GS = 10 V, f = 1.0 MHz
18
pF
8.0
pF
SWITCHING CHARACTERISTICS
t_r
Rise Time
ton
Turn-On Time
toff
Turn-Off Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%
VGS(_off) = 10 mA ,VGS(_on) = 0,
I_D = 20 mA, V_DS = 10 V TIS73
TIS74
VGS(off) = 10 mA ,VGS(on) = 0,
I_D = 20 mA, V_DS = 10 V
VGS(off) = 10 mA ,VGS(on) = 0,
I_D = 20 mA, V_DS = 10 V
TIS73
TIS74
3.0
ns
4.0
ns
6.0
ns
25
ns
50
ns