TIS73 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – N-Channel General Purpose Amplifier

TIS73
TIS74
G
SD
TO-92
N-Channel General Purpose Amplifier
This device is designed for low level analog switching, sample
and hold circuits and chopper stabalized amplifiers. Sourced from
Process 54.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_DG
VGS
I_GF
T_J, T_stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
30
- 30
10
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
TIS73 / TIS74
625
5.0
83.3
200
Units
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation