TIP30 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

Typical Characteristics
1000
100
VCE = -4V
10
1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
-10000
-10
IC(MAX) (PULSE)
IC(MAX) (DC)
-1
DC
TIP30 VCEO MAX.
TIP30A VCEO MAX.
TIP30B VCEO MAX.
TIP30C VCEO MAX.
-0.1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
-10000
-1000
VBE(sat)
IC/IB = 10
-100
VCE(sat)
-10
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
-10000
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
200
TC[^oC], CASE TEMPERATURE
Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000