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| TIP30 Datasheet, PDF (1/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS | |||
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TIP30 Series(TIP30/30A/30B/30C)
Medium Power Linear Switching Applications
⢠Complementary to TIP29/29A/29B/29C
1
TO-220
PNP Epitaxial Silicon Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: TIP30
: TIP30A
: TIP30B
: TIP30C
Value
- 40
- 60
- 80
- 100
VCEO
Collector-Emitter Voltage : TIP30
: TIP30A
: TIP30B
: TIP30C
- 40
- 60
- 80
- 100
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
-5
-1
-3
- 0.4
30
2
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: TIP30
: TIP30A
: TIP30B
: TIP30C
Test Condition
IC = -30mA, IB = 0
Min.
-40
-60
-80
-100
ICEO
ICES
IEBO
hFE
Collector Cut-off Current
: TIP30/30A
: TIP30B/30C
Collector Cut-off Current
: TIP30
: TIP30A
: TIP30B
: TIP30C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
VCE = -30V, IB = 0
VCE = -60V, IB = 0
VCE = -40V, VEB = 0
VCE = -60V, VEB = 0
VCE = -80V, VEB = 0
VCE = -100V, VEB = 0
VEB = -5V, IC = 0
VCE = -4V,IC = -0.2A
40
VCE = -4V, IC = -1A
15
IC = -1A, IB = -125mA
VCE = -4V, IC = -1A
VCE = -10V, IC = -200mA
3.0
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
V
V
-0.3 mA
-0.3 mA
-200 µA
-200 µA
-200 µA
-200 µA
-1.0 mA
75
-0.7
V
-1.3
V
MHz
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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