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| TIP147TU Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Darlington Transistor | |||
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Electrical Characteristics* TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage
: TIP145
: TIP146
: TIP147
IC = - 30mA, IB = 0
ICEO
ICBO
IEBO
hFE
Collector Cut-off Current
: TIP145
: TIP146
: TIP147
Collector Cut-off Current
: TIP145
: TIP146
: TIP147
Emitter Cut-off Current
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
tD
Delay Time
tR
Rise Time
tSTG
Storage Time
tF
Fall Time
* Pulse Test: Pulse Widthâ¤300μs, Duty Cycleâ¤2%
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
VBE = - 5V, IC = 0
VCE = - 4V,IC = - 5A
VCE = - 4V, IC = - 10A
IC = - 5A, IB = - 10mA
IC = - 10A, IB = - 40mA
IC = - 10A, IB = - 40mA
VCE = - 4V, IC = - 10A
VCC = - 30V, IC = - 5A
IB1= -20mA, IB2 = 20mA
RL = 6Ω
Min.
- 60
- 80
- 100
1000
500
Typ.
0.15
0.55
2.5
2.5
Max. Units
V
V
V
-2
mA
-2
mA
-2
mA
-1
mA
-1
mA
-1
mA
-2
mA
-2
V
-3
V
- 3.5
V
-3
V
μs
μs
μs
μs
© 2009 Fairchild Semiconductor Corporation
TIP145 / TIP146 / TIP147 Rev. B1
2
www.fairchildsemi.com
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