TIP147TU Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Darlington Transistor

TIP145 / TIP146 / TIP147
PNP Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h_FE = 1000 @ V_CE = -4V, I_C = -5A (Min.)
• Industrial Use
• Complement to TIP140/141/142
October 2009
Equivalent Circuit
C
B
1
TO-3P
1.Base 2.Collector 3.Emitter
R1
R1 ≅ 8kΩ
R2 ≅ 0.12kΩ
R2
E
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage : TIP145
: TIP146
: TIP147
- 60
V
- 80
V
- 100
V
V_CEO
Collector-Emitter Voltage : TIP145
: TIP146
: TIP147
- 60
V
- 80
V
- 100
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current (DC)
- 10
A
I_CP
Collector Current (Pulse)
- 15
A
I_B
Base Current (DC)
- 0.5
A
P_C
Collector Dissipation (T_C=25°C)
125
W
T_J
Junction Temperature
150
°C
T_STG
Storage Temperature
- 65 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2009 Fairchild Semiconductor Corporation
TIP145 / TIP146 / TIP147 Rev. B1
1
www.fairchildsemi.com