TIP145F Datasheet, PDF (2/4 Pages) Samsung semiconductor – PNP (HIGH DC CURRENT GAIN)

Typical Characteristics
-10
-9
-8
I_B = -1800µA
-7
I_B = -2000µA
-6
I_B
=
I_B
-1600µA
= -1400µA
I_B = -1200µA
I_B = -1000µA
-5
I_B = -800µA
-4
-3
I_B = -600µA
-2
-1
I_B = -400µA
-0
-0
-1
-2
-3
-4
-5
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10
V_BE(sat)
-1
V_CE(sat)
-0.1
I =-500I
C
B
-0.01
-0.1
-1
-10
-100
I_C[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-100
-10
DC
-1
-0.1
-1
TIP145F
TIP146F
TIP147F
-10
-100
V_CE[V], COLLECTOR-EMITTER VOLTAGE
-1000
Figure 5. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
100000
10000
V = -4V
CE
1000
100
-0.1
-1
-10
-100
I_C[A], COLLECTOR CURRENT
Figure 2. DC current Gain
-1000
f=0.1MHz
-100
-10
-1
-10
-100
-1000
V_CB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T_C[^oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. B, December 2002