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TIP145F Datasheet, PDF (1/4 Pages) Samsung semiconductor – PNP (HIGH DC CURRENT GAIN)
TIP145F/146F/147F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.)
• Industrial Use
• Complement to TIP140F/141F/142F
PNP Epitaxial Darlington Transistor
1
TO-3PF
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Emitter Voltage : TIP145F
: TIP146F
: TIP147F
Value
- 60
- 80
- 100
Units
V
V
V
VCEO
Collector-Emitter Voltage : TIP145F
- 60
V
: TIP146F
- 80
V
: TIP147F
- 100
V
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
-5
V
- 10
A
- 15
A
- 0.5
A
60
W
150
°C
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP145F
: TIP146F
: TIP147F
Test Condition
IC = - 30mA, IB = 0
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
tD
tR
tSTG
tf
Collector Cut-off Current
: TIP145F
: TIP146F
: TIP147F
Collector Cut-off Current
: TIP145F
: TIP146F
: TIP147F
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Delay Time
Rise Time
Storage Time
Fall Time
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
VBE = - 5V, IC = 0
VCE = - 4V, IC = - 5A
VCE = - 4V, IC = - 10A
IC = - 5A, IB = - 10mA
IC = - 10A, IB = - 40mA
IC = - 10A, IB = - 40mA
VCE = - 4V, IC = - 10A
VCC = - 30V, IC = - 5A
IB1 = -20mA, IB2 = 20mA
RL = 6Ω
©2002 Fairchild Semiconductor Corporation
Equivalent Circuit
C
B
R1
R1 ≅ 8kΩ
R2 ≅ 0.12kΩ
R2
E
Min. Typ. Max. Units
- 60
V
- 80
V
- 100
V
-2
mA
-2
mA
-2
mA
1000
500
0.15
0.55
2.5
2.5
-1
mA
-1
mA
-1
mA
-2
mA
-2
V
-3
V
- 3.5
V
-3
V
µs
µs
µs
µs
Rev. B, December 2002
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