TIP141T Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – Monolithic Construction With Built In Base- Emitter Shunt Resistors

Typical Characteristics
10
I_B = 2000uA
9
I = 1800uA
B
8 I = 1600uA
B
7 ^IB ^{= 1400uA}
6
I_B^{= 120}_I⁰_B^u₌^A1000uA
I = 800uA
B
I = 600uA
B
I_B = 400uA
5
4
I = 200uA
B
3
2
1
0
0
1
2
3
4
5
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
V_BE(sat)
1
V_CE(sat)
0.1
I =500I
C
B
0.01
0.1
1
10
100
I_C[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
10
DC
1
TIP140T
TIP141T
TIP142T
0.1
1
10
100
1000
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
100k
10k
V = 4V
CE
1k
100
10
0.1
1
10
100
I_C[A], COLLECTOR CURRENT
Figure 2. DC current Gain
1000
f=0.1MHz
100
10
1
10
100
1000
V_CB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T_C[^oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. B1, December 2002