TIP141T Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Monolithic Construction With Built In Base- Emitter Shunt Resistors

TIP140T/141T/142T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• High DC Current Gain : h_FE = 1000 @ V_CE = 4V, I_C = 5A (Min.)
• Industrial Use
• Complement to TIP145T/146T/147T
NPN Epitaxial Silicon Darlington Transistor
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
V_CBO
Parameter
Collector-Base Voltage
: TIP140T
: TIP141T
: TIP142T
Value
60
80
100
Units
V
V
V
Collector-Emitter Voltage : TIP140T
60
V
V_CEO
: TIP141T
80
V
: TIP142T
100
V
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T_C=25°C)
Junction Temperature
Storage Temperature
5
V
10
A
15
A
0.5
A
80
W
150
°C
- 65 ~ 150
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
V_CEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP140T
: TIP141T
: TIP142T
Test Condition
I_C = 30mA, I_B = 0
I_CEO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
t_D
t_R
t_STG
t_F
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Delay Time
Rise Time
Storage Time
Fall Time
V_CE = 30V, I_B = 0
V_CE = 40V, I_B = 0
V_CE = 50V, I_B = 0
V_CB = 60V, I_E = 0
V_CB = 80V, I_E = 0
V_CB = 100V, I_E = 0
V_BE = 5V, I_C = 0
V_CE = 4V, I_C = 5A
V_CE =4V, I_C = 10A
I_C = 5A, I_B = 10mA
I_C = 10A, I_B = 40mA
I_C = 10A, I_B = 40mA
V_CE = 4V, I_C = 10A
V_CC = 30V, I_C = 5A
I_B1 = 20mA
I_B2 = -20mA
R_L = 6Ω
©2002 Fairchild Semiconductor Corporation
Equivalent Circuit
C
B
R1
R1 ≅ 8kΩ
R2 ≅ 0.12kΩ
R2
E
Min. Typ. Max. Units
60
V
80
V
100
V
2
mA
2
mA
2
mA
1000
500
0.15
0.55
2.5
2.5
1
mA
1
mA
1
mA
2
mA
mA
2
V
3
V
3.5
V
3
V
µs
µs
µs
µs
Rev. B1, December 2002