TIP140 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60-100V,125W)

Typical Characteristics
10
IB = 2000uA
9
IB = 1800uA
8 _{IB = 1600uA}
7 IB = 1400uA
6
5
4
3
2
1
0
0
1
IB ^{= 120}_IB^0u₌^A1000uA
IB = 800uA
IB = 600uA
IB = 400uA
IB = 200uA
2
3
4
5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
VBE(sat)
1
VCE(sat)
0.1
IC=500IB
0.01
0.1
1
10
100
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
DC
1
0.1
1
TIP140
TIP141
TIP142
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
100k
10k
VCE = 4V
1k
100
10
0.1
1
10
100
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
1000
f=0.1MHz
100
10
1
10
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
150
125
100
75
50
25
0
0
25
50
75
100
125
150
175
TC[^oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000