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| TIP140 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60-100V,125W) | |||
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TIP140/141/142
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
⢠High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.)
⢠Industrial Use
⢠Complement to TIP145/146/147
NPN Epitaxial Silicon Darlington Transistor
1
TO-3P
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
: TIP140
: TIP141
: TIP142
Value
60
80
100
Units
V
V
V
VCEO
Collector-Emitter Voltage : TIP140
: TIP141
: TIP142
60
V
80
V
100
V
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
5
V
10
A
15
A
0.5
A
125
W
150
°C
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP140
: TIP141
: TIP142
Test Condition
IC = 30mA, IB = 0
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
tD
tR
tSTG
tF
Collector Cut-off Current
: TIP140
: TIP141
: TIP142
Collector Cut-off Current
: TIP140
: TIP141
: TIP142
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Delay Time
Rise Time
Storage Time
Fall Time
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VBE = 5V, IC = 0
VCE = 4V, IC = 5A
VCE = 4V, IC = 10A
IC = 5A, IB = 10mA
IC = 10A, IB = 40mA
IC = 10A, IB = 40mA
VCE = 4V, IC = 10A
VCC = 30V, IC = 5A
IB1 = 20mA, IB2 = -20mA
RL = 6â¦
Equivalent Circuit
C
B
R1
R1 â
8kâ¦
R2 â
0.12kâ¦
R2
E
Min. Typ. Max. Units
60
V
80
V
100
V
2
mA
2
mA
2
mA
1
mA
1
mA
1
mA
2
mA
1000
500
2
V
3
V
3.5
V
3
V
0.15
µs
0.55
µs
2.5
µs
2.5
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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