TIP120 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(5.0A,60-100V,65W)

Typical characteristics
10000
VCE = 4V
1000
100
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
f=0.1MHz
100
Cob
Cib
10
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TC[^oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
IC = 250IB
VBE(sat)
VCE(sat)
1
10
IC[A], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
500u1s00us
1ms
DC
5ms
1
0.1
0.01
1
TIP120
TIP121
TIP122
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A1, June 2001