 English |
|
|
|
|
|
|
|
| TIP120 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(5.0A,60-100V,65W) | |||
| |||
|
TIP120/121/122
Medium Power Linear Switching Applications
⢠Complementary to TIP125/126/127
1
TO-220
NPN Epitaxial Darlington Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage : TIP120
60
V
: TIP121
80
V
: TIP122
100
V
Equivalent Circuit
C
B
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Emitter Voltage : TIP120
: TIP121
: TIP122
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
60
V
80
V
100
V
5
V
5
A
8
A
120
mA
2
W
65
W
150
°C
- 65 ~ 150
°C
R1
R1 â
8kâ¦
R2 â
0.12kâ¦
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
Test Condition
IC = 100mA, IB = 0
Min. Max. Units
60
V
80
V
100
V
ICEO
ICBO
IEBO
hFE
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter ON Voltage
Cob
Output Capacitance
* Pulse Test : PWâ¤300µs, Duty cycle â¤2%
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
0.5 mA
0.5 mA
0.5 mA
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
0.2 mA
0.2 mA
0.2 mA
VBE = 5V, IC = 0
2 mA
VCE = 3V,IC = 0.5A
VCE = 3V, IC = 3A
1000
1000
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
2.0
V
4.0
V
VCE = 3V, IC = 3A
2.5
V
VCB = 10V, IE = 0, f = 0.1MHz
200 pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese