TIP110 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(2.0A,60-100V,50W)

Typical Characteristics
2.0
IB = 500 uA
1.8
IB = 450 uA
1.6 _{IB = 400 uA}
1.4
IB ^{= 350 uA} _IB = ^{300 uA}
IB ^{= 250 uA}
1.2
IB = 200 uA
1.0
0.8
0.6
IB = 150 uA
0.4
0.2
0.0
0
1
2
3
4
5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100
IC = 500 IB
10
VBE(sat)
1
VCE(sat)
0.1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
DC
1
TIP 110
TIP 111
0.1
1
TIP 112
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
10000
1000
VCE = 4V
100
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
1000
100
f = 0.1 MHz
10
1
0.01
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TC[^oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, June 2001