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| TIP110 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(2.0A,60-100V,50W) | |||
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TIP110/111/112
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
⢠Complementary to TIP115/116/117
⢠High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
⢠Low Collector-Emitter Saturation Voltage
⢠Industrial Use
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage : TIP110
: TIP111
60
V
80
V
: TIP112
100
V
Collector-Emitter Voltage : TIP110
60
V
VCEO
: TIP111
80
V
: TIP112
100
V
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
5
V
2
A
4
A
50
mA
2
W
50
W
150
°C
- 65 ~ 150
°C
Equivalent Circuit
C
B
R1
R1 â
10kâ¦
R2 â
0.6kâ¦
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage
: TIP110
: TIP111
: TIP112
IC = 30mA, IB = 0
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Cob
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
Collector Cut-off Current
: TIP110
: TIP111
: TIP112
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VBE = 5V, IC = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 2A
IC = 2A, IB = 8mA
VCE = 4V, IC = 2A
VCB = 10V, IE = 0, f = 0.1MHz
Min. Max. Units
60
V
80
V
100
V
2 mA
2 mA
2 mA
1 mA
1 mA
1 mA
2 mA
1000
500
2.5
V
2.8
V
100 pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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