TIP100 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,60-100V,80W)

Typical Characteristics
5
IB = 1mA
0.9mA
4
0.8mA
3
2
700uA _{600uA 500uA}
400uA
IB = 300 uA
IB = 200 uA
1
IB = 100 uA
0
0
1
2
3
4
5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10k
VBE(sat)
1k
VCE(sat)
Ic = 500 IB
100
0.1
1
10
100
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
1ms
10
DC
1
0.1
0.01
0.1
TIP100
TIP101
TIP102
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
10k
VCE = 4V
1k
100
0.1
1
10
Ic[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10k
1k
100
10
1
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TC[^oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, June 2001