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| TIP100 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,60-100V,80W) | |||
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TIP100/101/102
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
⢠High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
⢠Collector-Emitter Sustaining Voltage
⢠Low Collector-Emitter Saturation Voltage
⢠Industrial Use
⢠Complementary to TIP105/106/107
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage : TIP100
60
V
: TIP101
80
V
: TIP102
100
V
VCEO
Collector-Emitter Voltage : TIP100
60
V
: TIP101
80
V
: TIP102
100
V
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
5
V
8
A
15
A
1
A
2
W
80
W
150
°C
- 65 ~ 150
°C
Equivalent Circuit
C
B
R1
R1 â
10kâ¦
R2 â
0.6kâ¦
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP100
: TIP101
: TIP102
Test Condition
IC = 30mA, IB = 0
Min. Max. Units
60
V
80
V
100
V
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Cob
Collector Cut-off Current
: TIP100
: TIP101
: TIP102
Collector Cut-off Current
: TIP100
: TIP101
: TIP102
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
50
µA
50
µA
50
µA
VCE = 60V, IE = 0
VCE = 80V, IE = 0
VCE = 100V, IE = 0
50
µA
50
µA
50
µA
VEB = 5V, IC = 0
2
mA
VCE = 4V, IC = 3A
VCE = 4V, IC = 8A
1000 20000
200
IC = 3A, IB = 6mA
IC = 8A, IB = 80mA
2
V
2.5
V
VCE = 4V, IC = 8A
2.8
V
VCB = 10V, IE = 0, f = 0.1MHz
200 pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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