SI9933ADY Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage ^VGS ^{= 0 V, I}D ^{= –250 µA}
–20
V
∆BVDSS Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C
–12
∆TJ
Coefficient
mV/°C
IDSS
Zero Gate Voltage Drain Current ^VDS ^{= –16 V, V}GS ^{= 0 V}
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = –12 V, VDS = 0 V
–100 nA
IGSSR
Gate–Body Leakage, Reverse
VGS = 12 V, VDS = 0 V
100 nA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
∆V GS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = –250 µA
–0.8
ID = –250 µA, Referenced to 25°C
–1.0
3
–1.5
V
mV/°C
VGS = –4.5 V,
VGS = –3.0 V,
VGS = –2.7 V,
VGS = –4.5 V,
VDS = –9 V,
ID = –3.2 A
ID = –2.0 A
ID = –1.0 A
VDS = –5 V
ID = –3.4 A
44 75 mΩ
64 105
72 115
–16
A
8
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
825
pF
420
pF
150
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –6 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
VDS = –6 V,
VGS = –4.5 V
ID = –3.2 A,
16 40
ns
46 80
ns
40 70
ns
25 40
ns
10 20
nC
2.1
nC
3.3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
V SD
Drain–Source Diode Forward
VGS = 0 V, IS = –2.0 A (Note 2)
Voltage
–2.0 _A
–0.7 1.2
V
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R_θJC is guaranteed by design while R_{θ CA} is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in² pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in² pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si9933ADY Rev A(W)