SI9933ADY Datasheet, PDF (1/3 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

January 2001
Si9933ADY
Dual P-Channel PowerTrench^® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –5 A, –20 V,
RDS(ON) = 75 mΩ @ VGS = –4.5 V
RDS(ON) = 105 mΩ @ VGS = –3.0 V
RDS(ON) = 115 mΩ @ VGS = –2.7 V
• Extended VGSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
5
4
6
Q1
3
7
2
Q2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
V DSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
9933A
Si9933A DY
13’’
©2001 Fairchild Semiconductor International
Ratings
–20
±12
–3.4
–16
2
1.6
1
0.9
–55 to +175
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
Si9933ADY Rev A(W)