RHRP8120 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 8A, 1200V Hyperfast Diode

RHRP8120
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
V_F
I_F = 8 A
I_F = 8 A, T_C = 150^oC
-
-
3.2
V
-
-
2.6
V
I_R
V_R = 1200 V
V_R = 1200 V, T_C = 150^oC
-
-
100
µA
-
-
500
µA
t_rr
I_F = 1 A, dI_F/dt = 200 A/µs
I_F = 8 A, dI_F/dt = 200 A/µs
-
-
55
ns
-
-
70
ns
t_a
t_b
Q_rr
C_J
R_θJC
I_F = 8 A, dI_F/dt = 200 A/µs
I_F = 8 A, dI_F/dt = 200 A/µs
I_F = 8 A, dI_F/dt = 200 A/µs
V_R = 10 V, I_F = 0 A
-
30
-
ns
-
20
-
ns
-
165
-
nC
-
25
-
pF
-
-
2
o_C/W
DEFINITIONS
V_F = Instantaneous forward voltage (pw = 300 µs, D = 2%).
I_R = Instantaneous reverse current.
T_rr = Reverse recovery time (See Figure 9), summation of t_a + t_b.
t_a = Time to reach peak reverse current (See Figure 9).
t_b = Time from peak I_RM to projected zero crossing of I_RM based on a straight line from peak I_RM through 25% of I_RM (See Figure 9).
Q_rr = Reverse Recovery Charge.
C_J = Junction Capacitance.
R_θJC = Thermal resistance junction to case.
pw = Pulse Width.
D = Duty Cycle.
Typical Performance Curves
40
500
175^oC
100
10
175^oC 100^oC 25^oC
1
0.5
0
1
2
3
4
5
V_F, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
10
100^oC
1
25^oC
0.1
0.01
0.001
0
200
400
600
800
1000
V_R, REVERSE VOLTAGE (V)
1200
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
2
RHR8120 Rev. B
www.fairchildsemi.com