RHRP8120 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 8A, 1200V Hyperfast Diode

Data Sheet
8 A, 1200 V, Hyperfast Diode
The RHRP8120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are
intended to be used as freewheeling/ clamping diodes
and diodes in a variety of switching power supplies and
other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRP8120
TO-220AC
RHRP8120
NOTE: When ordering, use the entire part number.
Symbol
K
March 2001
RHRP8120
Features
• Hyperfast Recovery t_rr = 70 ns (@ I_F= 8 A)
• Max Forward Voltage, V_F = 3.2 V (@ T_C = 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
CATHODE
(FLANGE)
ANODE
CATHODE
A
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_R
Average Rectified
(T_C = 140^oC)
Forward
Current
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.I_F(AV)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_FRM
(Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_FSM
(Halfwave, 1 Phase, 60 Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_STG, T_J
RHRP8120
1200
1200
1200
8
16
100
75
20
-65 to 175
UNIT
V
V
V
A
A
A
W
mJ
o_C
©2001 Fairchild Semiconductor Corporation
1
RHR8120 Rev. B
www.fairchildsemi.com