QEC112_05 Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – Plastic Infrared Light Emitting Diode

Absolute Maximum Ratings (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)^(2,3,4)
Soldering Temperature (Flow)^(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation⁽¹⁾
T_OPR
T _STG
T_SOL-I
T_SOL-F
I_F
V_R
P_D
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
100
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Units
°C
°C
°C
°C
mA
V
mW
Electrical / Optical Characteristics (T_A = 25°C)
Parameter
Test Conditions Symbol
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity QEC112
Radiant Intensity QEC113
Rise Time
Fall Time
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA, tp = 20 ms
V_R = 5 V
I_F = 100 mA, tp = 20 ms
I_F = 100 mA, tp = 20 ms
I_F = 100 mA
λ_PE
2Θ¹/2
V_F
I_R
I_E
I_E
t_r
t_f
Min
–
–
–
–
6
14
–
–
Typ
940
24
–
–
–
–
1000
1000
Max
–
–
1.5
10
30
–
–
–
Units
nm
Deg.
V
µA
mW/sr
mW/sr
ns
ns
2
QEC112, QEC113 Rev. 1.0.0
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