QEC112_05 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Plastic Infrared Light Emitting Diode

September 2005
QEC112, QEC113
Plastic Infrared Light Emitting Diode
Features
■ λ = 940 nm_{PACKAGE DIMENSIONS}
■ Chip material = GaAs
■ Package type: T-1 (3 mm)
■ Can be used with QSCXXX Photosensor
■ Narrow Emission Angle, 24°
■ High Output Power
■ Package material and color: Clear, peach tinted plastic
Description
The QEC11X is an 940 nm GaAs LED encapsulated in a clear
peach tinted, plastic T-1 package.
Package Dimensions
0.116 (2.95)
REFERENCE
SURFACE
0.052 (1.32)
0.032 (0.082)
0.193 (4.90)
0.800 (20.3)
MIN
0.030 (0.76)
NOM
0.050 (1.27)
CATHODE
0.100 (2.54)
NOM
0.155 (3.94)
0.018 (0.46)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.10 (.25) on all non-nominal dimensions
unless otherwise specified.
Schematic
ANODE
CATHODE
©2005 Fairchild Semiconductor Corporation
1
QEC112, QEC113 Rev. 1.0.0
www.fairchildsemi.com