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| QEB373_06 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – Subminiature Plastic Infrared Emitting Diode | |||
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Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Symbol
Parameter
Rating
TOPR
TSTG
TSOL-I
TSOL-F
IF
VR
PD
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation(1)
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
100
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Unit
°C
°C
°C
°C
mA
V
mW
Electrical/Optical Characteristics (TA = 25°C)
Symbol
Parameter
Test Conditions
λP
Peak Emission Wavelength IF = 100mA
Î
Emission Angle
IF = 100mA
VF
Forward Voltage
IF = 100mA, tp = 20ms
IR
Reverse Current
VR = 5V
Ie
Radiant Intensity
IF = 100mA, tp = 20ms
tr
Rise Time
IF = 100mA
tf
Fall Time
tp = 20ms
Min.
16
Typ.
880
±12
800
800
Max.
1.7
100
Units
nm
°
V
µA
mW/sr
ns
ns
©2002 Fairchild Semiconductor Corporation
QEB373 Rev. 1.0.0
2
www.fairchildsemi.com
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