MMBT2222 Datasheet, PDF (2/4 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR)

Electrical Characteristics (Continued) T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Small Signal Characteristics
f_T
Curent Gain Bandwidth Product
C_obo
Output Capacitance
C_ibo
Input Capacitance
Switching Characteristics
I_C = 20mA, V_CE = 20V, f = 100MHz
V_CB = 10V, I_E = 0, f = 1MHz
V_EB = 0.5V, I_C = 0, f = 1MHz
t_d
Delay Time
t_r
Rise Time
t_s
Storage Time
t_f
Fall Time
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V_CC = 30V, V_BE(OFF) = 0.5V,
I_C = 150mA, I_B1 = 15mA
V_CC = 30V, I_C = 150mA,
I_B1 = I_B2 = 15mA
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Max.
350
2.8
357
Min.
250
Max. Units
8.0
pF
30
pF
10
ns
25
ns
225
ns
60
ns
Units
mW
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. B, May 2004