MMBT2222 Datasheet, PDF (1/4 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR)

MMBT2222
NPN General Purpose Amplifier
• Sourced from process 19.
C
E
B ^SOT-23
Mark: 1B
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_STG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
30
60
5.0
0.6
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
On Characteristics
I_C = 10mA, I_B = 0
I_C = 10µA, I_E = 0
I_E = 10µA, I_C = 0
V_CB = 50V, I_E = 0
V_CB = 50V, I_E = 0, T_a = 125°C
V_EB = 3.0V, I_C = 0
h_FE
V_CE(sat)
V_BE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
I_C = 0.1mA, V_CE = 10V
I_C = 1.0mA, V_CE = 10V
I_C = 10mA, V_CE = 10V
I_C = 150mA, V_CE = 10V *
I_C = 150mA, V_CE = 1.0V *
I_C = 500mA, V_CE = 10V *
I_C = 150mA, I_B = 15V
I_C = 500mA, I_B = 50V
I_C = 150mA, I_B = 15V
I_C = 500mA, I_B = 50V
Min. Max. Units
30
V
60
V
5.0
V
10
µA
10
µA
10
nA
35
50
75
100
300
50
30
0.4
V
1.6
1.3
V
2.6
©2004 Fairchild Semiconductor Corporation
Rev. B, May 2004