MMBF102 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – N-Channel RF Amplifier

Electrical Characteristics* T_a=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
V_(BR)GSS
I_GSS
Gate-Source Breakdown Voltage
Gate Reverse Current
I_G = -1.0mA, V_DS = 0
V_GS = -15V, V_DS = 0
T = 100°C
V_GS(off)
Gate-Source Cutoff Voltage
V_GS
Gate-Source Voltage
On Characteristics *
V_DS = 15V, I_D = 2nA
V_DS = 15V, I_D = 200mA
I_DSS
Zero-Gate Voltage Drain Current
gfs
Forward Transconductance
Small Signal Chracteristics
V_DS = 15V, V_GS = 0
V_GS = 0V, V_DS = 15V, f = 1kHz
C_ISS
C_RSS
Common-Source Input Capacitance
Common-Source Reverse Transfer
Capacitance
V_GS = 0V, V_DS = 15V, f = 1MHz
V_GS = 0V, V_DS = 15V, f = 1MHz
Min.
-25
-0.5
2.0
2000
Max. Units
V
-2.0
nA
-2.0
mA
-8.0
V
-7.5
V
20
mA
7500
mS
7.0
pF
3.0
pF
© 2007 Fairchild Semiconductor Corporation
MMBF102 Rev. 1.0.0
2
www.fairchildsemi.com