MMBF102 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel RF Amplifier

April 2008
MMBF102
N-Channel RF Amplifier
Features
• This device is designed primarily for electronic switching applications such as low On Resistance analog switching.
• Sourced from process 50
SOT - 23
Mark : 61Y
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
V_DG
V_GS
I_GF
T_J, T_STG
Parameter
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Storage Temperature Range
Value
25
-25
10
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
R_qJA
P_D
Thermal Resistance, Junction to Ambient
Total Device Dissipation(T_C=25°C)
Derate above 25°C
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Value
556
225
1.8
Units
V
V
mA
°C
Unit
°C/W
mW
mW/°C
© 2007 Fairchild Semiconductor Corporation
MMBF102 Rev. 1.0.0
1
www.fairchildsemi.com