MJE170 Datasheet, PDF (2/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,40-80V,12.5W)

Typical Charactristics
1000
VCE = -1V
100
10
-0.1
-1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
f=0.1MHZ
IE=0
100
10
1
-0.1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
1000
100
tSTG
tF
10
-0.1
-1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
©2001 Fairchild Semiconductor Corporation
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
VBE(sat) IC/IB=10
-0.8
-0.6
VBE@VCE= -1V
-0.4
-0.2
VCE(sat)
-0.0
-0.01
IC/IB=10
IC/IB=5
-0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
tR
tD
10
1
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
-10
500_µs ¹⁰⁰µ_s
-1
DC ^50ms
-0.1
-0.01
-1
MJE170
MJE171
MJE172
VCEMAX.
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A2, June 2001