MJE170 Datasheet, PDF (1/5 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,40-80V,12.5W)

MJE170/171/172
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
PNP Epitaxial Silicon Transistor
1
TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
V_CBO
Parameter
Collector-Base Voltage
: MJE170
: MJE171
: MJE172
Value
- 60
- 80
- 100
V_CEO
Collector-Emitter Voltage
: MJE170
- 40
: MJE171
- 60
: MJE172
- 80
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T_C=25°C)
Collector Dissipation (T_a=25°C)
Junction Temperature
Storage Temperature
-7
-3
-6
-1
12.5
1.5
150
- 65 ~ 150
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
BV_CEO
Collector-Emitter Breaksown Voltage
: MJE170 I_C = 10mA, I_B = 0
-40
: MJE171
-60
: MJE172
-80
I_CBO
Collector Cut-off Current
: MJE170
: MJE171
: MJE172
: MJE170
: MJE171
: MJE172
V_CB = - 60V, I_B = 0
V_CB = - 80V, I_E = 0
V_CB = - 100V, I_E = 0
V_CB = - 60V, I_E = 0, @T_C = 150°C
V_CB = - 80V, I_E = 0, @T_C = 150°C
V_CB = - 100V, I_E = 0, @T_C = 150°C
I_EBO
Emitter Cut-off Current
V_BE = - 7V, I_C = 0
h_FE
DC Current Gain
V_CE = - 1V, I_C = - 100mA
50
V_CE = - 1V, I_C = - 500mA
30
V_CE = - 1V, I_C = - 1.5A
12
V_CE(sat)
Collector-Emitter Saturation Voltage
I_C = - 500mA, I_B = - 50mA
I_C = - 1.5A, I_B = - 150mA
I_C = - 3A, I_B = - 600mA
V_BE(sat)
Base-Emitter Saturation Voltage
I_C = - 1.5A, I_B = - 150mA
I_C = - 3A, I_B = - 600mA
V_BE(on)
Base-Emitter ON Voltage
V_CE = - 1V, I_C = - 500mA
f_T
Current Gain Bandwidth Product
V_CE = - 10V, I_C = - 100mA
50
C_ob
Output Capacitance
V_CB = - 10V, I_E = 0, f = 0.1MHz
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
V
-0.1 µA
-0.1 µA
-0.1 µA
-0.1 mA
-0.1 mA
-0.1 mA
-0.1 µA
250
-0.3
V
-0.9
V
-1.7
V
-1.5
V
-2.0
V
-1.2
V
MHz
50 pF
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001