MJD122_09 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – NPN Silicon Darlington Transistor

Typical Performance Characteristics
10k
VCE = 4V
1k
10
VBE(sat)
1
VCE(sat)
0.1
IC = 250 IB
100
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
100
10
0.01
0.1
1
10
100
IC[A], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
VCC= 30V
IC=250IB
IB1=IB2
1
tR
tD, VBE(off)=0
0.1
1
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
10
VCC=30V
IC=250IB
tSTG
1
tF
0.1
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
100
10
1
DC^{5m1sm5s001μ0s0μs}
0.1
0.01
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
© 2009 Fairchild Semiconductor Corporation
MJD122 Rev. B0
2
www.fairchildsemi.com