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| MJD122_09 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Silicon Darlington Transistor | |||
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MJD122
NPN Silicon Darlington Transistor
Features
⢠D-PAK for Surface Mount Applications
⢠High DC Current Gain
⢠Built-in a Damper Diode at E-C
⢠Lead Formed for Surface Mount Applications
⢠Electrically Similar to Popular TIP122
⢠Complement to MJD127
1
D-PAK
1.Base 2.Collector 3.Emitter
December 2009
Equivalent Circuit
C
B
R1
R1 â
8kΩ
R2 â
0.12kΩ
R2
E
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (TA=25°C)
Junction Temperature
Storage Temperature
Value
100
100
5
8
16
120
20
1.75
150
- 65 to 150
Units
V
V
V
A
A
mA
W
W
°C
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICEO
ICBO
IEBO
hFE
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
VCE(sat) *Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
Cob
*Base-Emitter Saturation Voltage
*Base-Emitter On Voltage
Output Capacitance
* Pulse Test: PWâ¤300μs, Duty Cycleâ¤2%
IC = 30mA, IB = 0
VCE = 50V, IB =0
VCB = 100V, IE = 0
VEB = 5V, IC = 0
VCE = 4V, IC = 4A
VCE = 4V, VEB = 8A
IC = 4A, IB = 16mA
IC = 8A, IB = 80mA
IC = 8A, IB = 80mA
VCE = 4V, IC = 4A
VCB = 10V, IE = 0
f= 0.1MHz
Min.
100
1000
100
Max.
10
10
2
12K
2
4
4.5
2.8
200
Units
V
μA
μA
mA
V
V
V
V
pF
© 2009 Fairchild Semiconductor Corporation
MJD122 Rev. B0
1
www.fairchildsemi.com
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