KST92_09 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
Collector-Base Breakdown Voltage
: KST92
: KST93
I_C= -100μA, I_E=0
BV_CEO
* Collector-Emitter Breakdown Voltage
: KST92
: KST93
I_C= -1mA, I_B=0
BV_EBO
I_CBO
I_EBO
h_FE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KST92
: KST93
Emitter Cut-off Current
* DC Current Gain
V_CE (sat)
V_BE (sat)
C_ob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
: KST92
: KST93
I_E= -100μA, I_C=0
V_CB= -200V, I_E=0
V_CB= -160V, I_E=0
V_EB= -5V, I_C=0
V_CE= -10V, I_C= -1mA
V_CE= -10V, I_C= -10mA
V_CE= -10V, I_C= -30mA
I_C= -20mA, I_B= -2mA
I_C= -20mA, I_B= -2mA
V_CB= -20V, I_E=0
f=1MHz
f_T
Current Gain Bandwidth Product
* Pulse Test: PW≤300μs, Duty Cycle≤2%
V_CE= -20V, I_C= -10mA
f=100MHz
Marking Code
Type
Mark
KST92
2D
Marking
2D
Min. Max. Units
-300
V
-200
V
-300
V
-200
V
-5
V
-0.25 μA
-0.25 μA
-0.1
μA
25
40
25
-0.5
V
-0.9
V
6
pF
8
pF
50
MHz
KST93
2E
© 2009 Fairchild Semiconductor Corporation
KST92/KST93 Rev. C1
2
www.fairchildsemi.com