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KST92_09 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor
KST92/KST93
PNP Epitaxial Silicon Transistor
Features
• High Voltage Transistor
• High Current, Wide SOA
September 2009
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
TJ, TSTG
Parameter
Collector Base Voltage
: KST92
: KST93
Collector-Emitter Voltage
: KST92
: KST93
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature
Thermal Characteristics
Symbol
Parameter
PD
Power Dissipation (TA=25°C)
RθJA*
Thermal Resistance, Junction to Ambient
* note) minimum land pattern size.
Value
-300
-200
-300
-200
-5
-500
150
Units
V
V
V
V
V
mA
°C
Value
250
500
Units
mW
°C/W
© 2009 Fairchild Semiconductor Corporation
KST92/KST93 Rev. C1
1
www.fairchildsemi.com