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KSH44H11TM Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor
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Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
VCEO(sus)
Collector-Emitter Sustaining
Voltage(1)
IC = 30 mA, IB = 0
ICEO Collector Cut-Off Current
VCE = 80 V, IB = 0
IEBO Emitter Cut-Off Current
VBE = 5 V, IC = 0
hFE
DC Current Gain
VCE = 1 V, IC = 2 A
VCE = 1 V, IC = 4 A
VCE(sat) Collector-Emitter Saturation Voltage IC = 8 A, IB = 0.4 A
VBE(on) Base-Emitter Saturation Voltage IC = 8 A, IB = 0.8 A
fT
Current Gain Bandwidth Product VCE = 10 A, IC = 0.5 A
Cob
Output Capacitance
VCB = 10 V, f = 1 MHz
tON
tSTG
tF
Turn-On Time
Storage Time
Fall Time
IC = 5 A
IB1 = -IB2 = - 0.5 A
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Min.
80
60
40
Typ.
50
130
300
500
140
Max.
10
50
1
1.5
Unit
V
μA
μA
V
V
MHz
pF
ns
ns
ns
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 1.1.0
2
www.fairchildsemi.com
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