KSH44H11TM Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

November 2013
KSH44H11 / KSH44H11I
NPN Epitaxial Silicon Transistor
Features
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular KSE44H
• Fast Switching Speeds
• Low Collector-Emitter Saturation Voltage
Description
Designed for general-purpose power and switching, such
as output or driver stages in applications.
Applications
• Switching Regulators
• Converters
• Power Amplifiers
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number
KSH44H11TF
KSH44H11TM
KSH44H11ITU
Top Mark
KSH44H11
KSH44H11
KSH44H11-I
Package
TO-252 3L (DPAK)
TO-252 3L (DPAK)
TO-251 3L (IPAK)
Packing Method
Tape and Reel
Tape and Reel
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T_C = 25°C unless otherwise noted.
Symbol
V_CEO
V_EBO
I_C
I_CP
P_C
T_J
T_STG
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T_C = 25°C)
Collector Dissipation (T_A = 25°C)
Junction Temperature
Storage Temperature
Value
80
5
8
16
20.00
1.75
150
-65 to 150
Unit
V
V
A
A
W
°C
°C
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 1.1.0
1
www.fairchildsemi.com