KSH200_10 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

Typical Performance Characteristics
1000
100
VCE=2V
VCE=1V
10
1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
100
10
1
0.1
1
10
100
V_CB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance
1000
t_STG
t_F
100
V_CC=30V
I_C=10I_B
I_B1=-I_B2
10
0.01
0.1
1
10
I_C[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
10
I_C=10I_B
1
V_BE(sat)
V
(sat)
CE
0.1
0.01
0.01
0.1
1
10
I_C[A], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
VCC=30V
IC=10IB
1
tR
0.1
tD
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
100
10
5ms
50_1m0μss100μ_s
DC
1
0.1
0.01
0.1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
© 2010 Fairchild Semiconductor Corporation
KSH200 Rev. B0
2
www.fairchildsemi.com