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| KSH200_10 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor | |||
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KSH200
NPN Epitaxial Silicon Transistor
August 2010
Features
⢠D-PAK for Surface Mount Applications
⢠High DC Current Gain
⢠Lead Formed for Surface Mount Applications (No Suffix)
⢠Straight Lead (I-PAK, â - I â Suffix)
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (Tc = 25°C)
Collector Dissipation (Ta = 25°C)
Junction Temperature
Storage Temperature
Value
40
25
8
5
10
1
12.5
1.4
150
-55 to 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Conditions
BVCEO(sus)
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
* Collector Emitter Sustaining Voltage IC = 100mA, IB = 0
Collector Cut-off Current
VCB = 40V, IE = 0
Emitter Cut-off Current
VEB = 8V, IC = 0
* DC Current Gain
VCE = 1V, IC = 500mA
VCE = 1V, IC = 2A
VCE = 2V, IC = 5A
* Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA
IC = 2A, IB = 200mA
IC = 5A, IB = 1A
* Base-Emitter Saturation Voltage
IC = 5A, IB = 1A
* Base-Emitter On Voltage
VCE = 1V, IC = 2A
Current Gain Bandwidth Product
VCE = 10V, IC = 100mA
Output Capacitance
VCB = 10V, IE = 0, f = 0.1MHz
* Pulse test: PW ⤠300μs, Duty Cycle ⤠2% Pulsed
Min.
25
70
45
10
65
Max.
100
100
Units
V
nA
nA
180
0.3
V
0.75
V
1.8
V
2.5
V
1.6
V
MHz
80
pF
© 2010 Fairchild Semiconductor Corporation
KSH200 Rev. B0
1
www.fairchildsemi.com
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