KSH13003 Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – High Voltage Power Transistor D-PACK for Surface Mount Applications

Typical Characteristics
2.0
1.8
1.6
1.4
IB^=500mAIB^{=450mAIB=400Im}_{B=A350mA IB=300IBm=A250mA}
1.2
IB=200mA
IB=150mA
1.0
IB=100mA
0.8
IB=50mA
0.6
0.4
0.2
IB=0mA
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
1
VBE(sat)
VC E (sa t)
0.1
IC=4IB
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
IC MAX. (PLUSE)
IC MAX.(DC)
1
10uS
5mS ^1mS 100uS
0.1
0.01
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
100
VCE=2V
10
1
0.1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
tstg
1
tf
0.1
0.01
0.1
1
IB[A], BASE CURRENT
Figure 4. Switching Time
50
45
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
TC[^oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000