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| KSH13003 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High Voltage Power Transistor D-PACK for Surface Mount Applications | |||
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KSH13003
High Voltage Power Transistor
D-PACK for Surface Mount Applications
⢠High speed Switching
⢠Suitable for Switching Regulator Motor Control
⢠Straight Lead (I.PACK, I Suffix)
⢠Lead Formed for Surface Mount Applications (No Suffix)
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
IEBO
hFE
VCE(sat)
* Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
Cob
Output Capacitance
fT
Current Gain Bandwidth Product
tON
Turn ON time
tSTG
Storage time
tF
Fall Time
* Pulse Test: Pulse Width=5ms, Duty Cycleâ¤10%
IC = 5mA, IB = 0
VEB = 9V, IC = 0
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
IC = 1.5A, IB = 0.5A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.1A
VCC = 125V, IC = 1A
IB1 = 0.2A, IB2 = - 0.2A
Value
700
400
9
1.5
3
0.75
40
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Min.
400
8
5
4
Typ.
21
Max.
10
40
Units
V
µA
0.5
V
1
V
3
V
1
V
1.2
V
pF
MHz
1.1
µs
4.0
µs
0.7
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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