KSD568 Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – Low Frequency Power Amplifier

Typical Characteristics
1.0
I_B = 18mA
I = 16mA
B
0.8
I = 14mA
B
I = 12mA
B
0.6
I_B = 10mA
I = 8mA
B
0.4
I = 6mA
B
I = 4mA
B
0.2
I = 2mA
B
0.0
0
10
20
30
40
50
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 1. Static Characteristic
1000
V = 1V
CE
100
10
0.01
0.1
1
10
I_C[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
1
V_BE(sat)
I = 10 I
C
B
0.1
V_CE(sat)
0.01
0.01
0.1
1
10
I_C[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
160
140
120
100
80
60
40
20
0
0
S/b
S/b _LIMITED
LIMITED
25
50
75
100
125
150
175
200
T_C[^oC], CASE TEMPERATURE
Figure 4. Derating Curve Of Safe Operating Areas
100
10
1
DISSPATION _{LIM1I0T0EmDs10m1ms}^{3s00u1s00us 50us}
0.1
S/b _LIMITED
0.01
1
10
100
1000
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Forward Bias Safe Operating Area
©2000 Fairchild Semiconductor International
50
45
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
T [oC], CASE TEMPERATURE
C
Figure 6. Power Derating
Rev. A, February 2000