KSD568 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Low Frequency Power Amplifier

KSD568/569
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
• Complement to KSB707/708
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
: KSD568
: KSD569
V_EBO
Emitter-Base Voltage
I_C
Collector Current (DC)
I_CP
*Collector Current (Pulse)
I_B
Base Current
P_C
Collector Dissipation (T_C=25°C)
P_C
Collector Dissipation (T_a=25°C)
T_J
Junction Temperature
T_STG
Storage Temperature
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I_CBO
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
h_FE1
h_FE2
*DC Current Gain
V_CE(sat)
*Collector-Emitter Saturation Voltage
V_BE(sat)
*Base-Emitter Saturation Voltage
* Pulse Test: PW≤350µs, Duty Cycle≤2%
V_CB = 80V, I_E = 0
V_EB = 5V, I_C = 0
V_CE = 1V, I_C = 3A
V_CE = 1V, I_C = 5A
I_C = 5A, I_B = 0.5A
I_C = 5A, I_B = 0.5A
h_FE Classification
Classification
h_FE1
R
40 ~ 80
O
60 ~ 120
Value
100
60
80
7
7
15
3.5
40
1.5
150
- 55 ~ 150
Units
V
V
V
V
A
A
A
W
W
°C
°C
Min.
40
20
Max.
10
10
200
Units
µA
µA
0.5
V
1.5
V
Y
100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000