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J309_D26Z Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – N-Channel RF Amplifier
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Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0
-25
IGSS Gate Reverse Current
VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 125°C
VGS(off) Gate-Source Cut-Off Voltage
MMBFJ309 -1.0
VDS = 10 V, ID = 1.0 nA MMBFJ310 -2.0
V
-1.0 nA
-1.0 μA
-4.0
V
-6.5
On Characteristics
IDSS
Zero-Gate Voltage Drain
Current(4)
VDS = 10 V, VGS = 0
MMBFJ309 12
MMBFJ310 24
30
mA
60
VGS(f) Gate-Source Forward Voltage
Small Signal Characteristics
VDS = 0, IG = 1.0 mA
1.0
V
Re(yis)
Common-Source Input
Conductance
VDS = 10 V, ID = 10 mA, MMBFJ309
0.7
f = 100 MHz
MMBFJ310
0.5
mmhos
Re(yos)
Common-Source Output
Conductance
VDS = 10 V, ID = 10 mA, f = 100 MHz
0.25
mmhos
Gpg
Re(yfs)
Re(yig)
Common-Gate Power Gain
Common-Source Forward
Transconductance
Common-Gate Input
Conductance
VDS = 10 V, ID = 10 mA, f = 100 MHz
VDS = 10 V, ID = 10 mA, f = 100 MHz
VDS = 10 V, ID = 10 mA, f = 100 MHz
16
dB
12
mmhos
12
mmhos
gfs
Common-Source Forward
Transconductance
VDS = 10 V, ID = 10 mA, MMBFJ309 10000
f = 1.0 kHz
MMBFJ310 8000
20000
μmhos
18000
goss
Common-Source Output
Conductance
VDS = 10 V, ID = 10 mA, f = 1.0 kHz
150 μmhos
gfg
Common-Gate Forward
Conductance
VDS = 10 V, ID = 10 mA, MMBFJ309
f = 1.0 kHz
MMBFJ310
13000
12000
μmhos
gog
Common-Gate Output
Conductance
VDS = 10 V, ID = 10 mA, MMBFJ309
100
f = 1.0 kHz
MMBFJ310
150
μmhos
Cdg Drain-Gate Capacitance
Csg Source-Gate Capacitance
NF Noise Figure
en
Equivalent Short-Circuit Input
Noise Voltage
VDS = 0, VGS = -10 V, f = 1.0 MHz
VDS = 0, VGS = -10 V, f = 1.0 MHz
VDS = 10 V, ID = 10 mA, f = 450 MHz
VDS = 10 V, ID = 10 mA, f = 100 Hz
2.0 2.5 pF
4.1 5.0 pF
3.0
dB
6.0
nV/ Hz
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
2
www.fairchildsemi.com
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