J309_D26Z Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel RF Amplifier

January 2015
MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Description
This device is designed for VHF/UHF amplifier, oscil-
lator and mixer applications. As a common gate
amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz
can be realized. Sourced from process 92. Source &
Drain are interchangeable.
G
SOT-23
S
Note: Source & Drain
D
are interchangeable
Ordering Information
Part Number
MMBFJ309
MMBFJ310
Top Mark
6U
6T
Package
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings^{(1), (2)}
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
V_DG
V_GS
I_GF
T_J, T_STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
V
-25
V
10
mA
-55 to 150
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics⁽³⁾
Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
Max.
Unit
Total Device Dissipation
P_D
Derate Above 25°C
350
mW
2.8
mW/°C
R_θJA
Thermal Resistance, Junction-to-Ambient
357
°C/W
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm².
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
www.fairchildsemi.com