J309_10 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – N-Channel RF Amplifier

Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
BV_(BR)GSS Gate-Source Breakdown Voltage I_G = -1.0μA, V_DS = 0
-25
I_GSS Gate Reverse Current
V_GS = -15V, V_DS = 0
V_GS = -15V, V_DS = 0, T_a = 125°C
V_GS(off) Gate-Source Cutoff Voltage
V_DS = 10V, I_D = 1.0nA
309 -1.0
310 -2.0
V
-1.0 nA
-1.0 μA
-4.0
V
-6.5
V
On Characteristics
I_DSS Zero-Gate Voltage Drain
Current*
V_DS = 10V, V_GS = 0
309 12
310 24
30
mA
60
mA
V_GS(f) Gate-Source Forward Voltage
Small Signal Characteristics
V_DS = 0, I_G = 1.0mA
1.0
V
Re_(yis) Common-Source Input
V_DS = 10V, I_D = 10mA, f = 100MHz
Conductance
309
0.7
mmhos
310
0.5
mmhos
Re_(yos) Common-Source Output
Conductance
V_DS = 10V, I_D = 10mA, f = 100MHz
0.25
mmhos
G_pg Common-Gate Power Gain
V_DS = 10V, I_D = 10mA, f = 100MHz
16
dB
Re_(yfs) Common-Source Forward
V_DS = 10V, I_D = 10mA, f = 100MHz
12
mmhos
Transconductance
Re_(yig) Common-Gate Input
Conductance
V_DS = 10V, I_D = 10mA, f = 100MHz
12
mmhos
g_fs Common-Source Forward
Transconductance
V_DS = 10V, I_D = 10mA, f = 1.0kHz
309 10,000
310 8,000
20,000 μmhos
18,000 μmhos
g_oss Common-Source Output
Conductance
V_DS = 10V, I_D = 10mA, f = 1.0kHz
150 μmhos
g_fg Common-Gate Forward
Conductance
V_DS = 10V, I_D = 10mA, f = 1.0kHz
309
310
13,000
12,000
μmhos
μmhos
g_og Common-Gate Output
V_DS = 10V, I_D = 10mA, f = 1.0kHz
Conductance
309
100
μmhos
310
150
μmhos
C_dg Drain-Gate Capacitance
V_DS = 0, V_GS = -10V, f = 1.0MHz
C_sg Source-Gate Capacitance
V_DS = 0, V_GS = -10V, f = 1.0MHz
NF Noise Figure
V_DS = 10V, I_D = 10mA, f = 450MHz
e_n
Equivalent Short-Circuit Input V_DS = 10V, I_D = 10mA, f = 100Hz
Noise Voltage
2.0 2.5
pF
4.1 5.0
pF
3.0
dB
6.0
nV/ Hz
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
2
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