J309_10 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel RF Amplifier

J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Features
• This device is designed for VHF/UHF amplifier, oscillator and mixer applications.
• As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.
• Sourced from Process 92.
• Source & Drain are interchangeable.
J309
J310
MMBFJ309
MMBFJ310
G
December 2010
GS _D
TO-92
SOT-23
S
Mark MMBFJ309 : 6U
D
MMBFJ310 : 6T
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_DS
Drain-Source Voltage
25
V
V_GS
Gate-Source Voltage
-25
V
I_GF
Forward Gate Current
10
mA
T_J, T_stg Operating and Storage Junction Temperature Range
- 55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
Max.
J309-J310 *MMBFJ309-310
625
350
5.0
2.8
127
357
556
Units
mW
mW/°C
°C/W
°C/W
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
1
www.fairchildsemi.com